Gas-source molecular-beam epitaxy using Si2H6 and GeH4 and x-ray characterization of Si1-xGex (0x0.33) alloys
نویسندگان
چکیده
Gas-source molecular-beam epitaxy (MBE) has been used to grow SiGe alloys with S&H6 and GeH4 as sources on (100) Si substrates. Single-crystalline epilayers with Ge composition as high as 33% have been produced at 610 “C, the lowest temperature hitherto used for gas-source SiGe MBE. Growth parameters, growth modes, and the structural characteristics have been studied by a variety of in situ and ex situ techniques. Double-crystal x-ray diffraction data-for the alloys have been obtained for the first time in thin mismatched layers.
منابع مشابه
Advances in Natural Sciences: Nanoscience and Nanotechnology
One of the main requirements for ultra-large-scale integrations (ULSIs) is atomic-order control of process technology. Our concept of atomically controlled processing is based on atomic-order surface reaction control by CVD. By ultraclean low-pressure CVD using SiH4 and GeH4 gases, high-quality low-temperature epitaxial growth of Si1−xGex (100) (x = 0–1) with atomically flat surfaces and interf...
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